R&D ion implanter manufacture
The implanters that we design for R &D are manufactured specifically to allow the researchers to obtain equipment adapted to their research and to their objectives.
The manufacture of R&D ion implanters for the doping of semiconductors or for any other use requires a specific knowledge, which we can supply having experience over a period of 20 years in the industry. We propose custom-made ion implanters.
Flexible R&D implanter in energy, AMU, kind of source, chamber, etc....
- Energy : 1-300 KV
- AMU : up to 250, resolution > 1000
- All Stable Elements
- Beam current > 10mA (According to species)
- Source : All kind of gas, liquid, solid (from 50°C to 1100°C), sputtering
- Electrostatic, magnetic ou mechanical scanning and focus system
- Heated, cooled, directional holder
- Mechanical electrod up to 3 axes
- PC Control and supervision (LabVIEW)
We manufacture various types of ion sources which we provide according to the projects and the applications
- Freeman source
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Bernas source
- ELS source
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Sputtering source
- Penning source